| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask for imprint lithography including an alignment mark that can be easily manufactured. <P>SOLUTION: The mask for the imprint lithography includes a transfer pattern formed by recesses and projections formed by digging a surface of a substrate comprising a transparent material and the alignment mark formed by recesses and projections formed by digging the surface of a part different from the transfer pattern. It is desirable that the recess depth of the recesses and projections of the transfer pattern and the recess depth of the recesses and projections of the alignment mark are equal. Also, it is preferable that the recesses and projections forming the alignment mark are cyclic and the maximum cycle is shorter than 189 nm. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
