| 摘要 |
<p>A pressed-contact type semiconductor device comprises: a power semiconductor element (21), on an upper surface of which at least a first electrode (26, 27) is formed and on a lower surface of which at least a second electrode (25) is formed;
lead frames (8, 9, 10) which face the first electrode and the second electrode of the power semiconductor element respectively; and
a clip (28) which applies a pressure to the lead frames while the power semiconductor element is sandwiched by the lead frames,
wherein a metallic porous plating part (22, 23, 24) is formed on a surface which faces the first electrode or the second electrode, the surface being a surface of at least one of the lead frames.</p> |
