发明名称 |
Methods for producing a tunnel field-effect transistor |
摘要 |
A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods. |
申请公布号 |
US8946037(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US201313957277 |
申请日期 |
2013.08.01 |
申请人 |
Infineon Technologies AG |
发明人 |
Kakoschke Ronald;Tews Helmut |
分类号 |
H01L21/336;H01L29/66;H01L29/73;H01L21/28;H01L21/8234;H01L27/088;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method of forming an integrated circuit, the method comprising:
forming an auxiliary layer over a substrate; forming at least one auxiliary region by patterning the auxiliary layer and removing material of the auxiliary layer; forming a first spacer element in a region in which material of the auxiliary layer has been removed; doping a first connection region having a first doping type of a transistor, the first spacer element and the auxiliary region serving as a mask; covering the first connection region with a covering material, wherein the covering material is a first insulating material; removing material of the auxiliary region; forming a second spacer element in a region in which material of the auxiliary region has been removed, wherein the second spacer element is a second insulating material; and doping a second connection region having a second doping type of the transistor, the first doping type being opposite the second doping type, the second spacer element and the covering material serving as a mask, wherein the first connection region and the second connection region form input/output nodes of a tunnel transistor. |
地址 |
Neubiberg DE |