发明名称 Light emitting device, light emitting module, and method for manufacturing light emitting device
摘要 According to one embodiment, a light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a first insulating layer, a p-side interconnect layer, an n-side interconnect layer, and a second insulating layer. The portion of the second p-side interconnect layer has the L-shaped cross section being configured to include a p-side external terminal exposed from the first insulating layer and the second insulating layer at a third surface having a plane orientation different from the first surface and the second surface. The portion of the second n-side interconnect layer has the L-shaped cross section being configured to include an n-side external terminal exposed from the first insulating layer and the second insulating layer at the third surface.
申请公布号 US8946738(B2) 申请公布日期 2015.02.03
申请号 US201313961527 申请日期 2013.08.07
申请人 Kabushiki Kaisha Toshiba 发明人 Kojima Akihiro;Sugizaki Yoshiaki;Akimoto Yosuke;Higuchi Kazuhito;Obata Susumu
分类号 H01L33/00;H01L29/20;H01L33/62;H01L33/48;H01L33/20;H01L33/44;H01L33/54;H05K1/18 主分类号 H01L33/00
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A light emitting device, comprising: a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer provided between the first surface and the second surface; a p-side electrode provided on the semiconductor layer; an n-side electrode provided on the semiconductor layer; a first insulating layer provided on the second surface side, the first insulating layer having a first via communicating with the p-side electrode and a second via communicating with the n-side electrode; a p-side interconnect layer including a first p-side interconnect layer electrically connected to the p-side electrode through the first via, and a second p-side interconnect layer electrically connected to the first p-side interconnect layer and provided on an interconnect surface provided on a side of the first insulating layer opposite to the semiconductor layer, the second p-side interconnect layer including a portion having a U-shaped cross section; an n-side interconnect layer including a first n-side interconnect layer electrically connected to the n-side electrode through the second via, and a second n-side interconnect layer electrically connected to the first n-side interconnect layer, separated from the p-side interconnect layer and provided on the interconnect surface, the second n-side interconnect layer including a portion having a U-shaped cross section; and a second insulating layer provided between the p-side interconnect layer and the n-side interconnect layer, the portion of the second p-side interconnect layer having a p-side external terminal exposed from the first insulating layer and the second insulating layer at a third surface having a plane orientation different from the first surface and the second surface, the portion of the second n-side interconnect layer having an n-side external terminal exposed from the first insulating layer and the second insulating layer at the third surface.
地址 Minato-ku JP