发明名称 Programmable semiconductor interposer for electronic package and method of forming
摘要 Various structures of a programmable semiconductor interposer for electronic packaging are described. An array of semiconductor devices having various values is formed in the interposer. A user can program the interposer and form a “virtual” device having a desired value by selectively connecting various one of the array of devices to contact pads formed on the surface of the interposer. An inventive electronic package structure includes a standard interposer having an array of unconnected devices of various values and a device selection unit, which selectively connects various one of the array of devices in the standard interposer to an integrated circuit die encapsulated in the electronic package. Methods of forming the programmable semiconductor interposer and the electronic package are also illustrated.
申请公布号 US8945998(B2) 申请公布日期 2015.02.03
申请号 US201313932784 申请日期 2013.07.01
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Hsu Chao-Shun;Chao Clinton;Peng Mark Shane
分类号 H01L21/82;H01L21/768;H01L23/498;H01L23/538;H01L23/64;H01L21/00;H01L23/14 主分类号 H01L21/82
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method of forming a semiconductor interposer, the method comprising: forming an array of semiconductor devices having a plurality of electrical parameters in an insulating material on a first surface of a substrate, each semiconductor device of the array of semiconductor devices having a vertical interconnect extending to a first surface of the insulating material; forming one or more first contact pads on a second surface of the substrate, the second surface of the substrate being a second surface of the semiconductor interposer; forming one or more second contact pads over the insulating material, the one or more second contact pads being on a first surface of the semiconductor interposer, the first surface of the interposer being opposite the second surface of the interposer, the first surface of the insulating material being between the first surface of the substrate and the first surface of the semiconductor interposer, at least one of the second contact pads being coupled to at least one of the first contact pads; and obtaining a desired electrical parameter for an integrated circuit device attached to the interposer comprising: selectively connecting the vertical interconnect of at least one of the array of semiconductor devices to at least one of the second contact pads; andselectively connecting the vertical interconnect of at least one of the array of semiconductor devices to the vertical interconnect of at least one other of the array of semiconductor devices.
地址 Hsin-Chu TW