发明名称 Nonvolatile semiconductor storage system
摘要 A nonvolatile semiconductor storage system has multiple nonvolatile semiconductor storage media, a control circuit having a media interface group (one or more interface devices) coupled to the multiple nonvolatile semiconductor storage media, and multiple switches. The media interface group and the multiple switches are coupled via data buses, and each switch and each of two or more nonvolatile chips are coupled via a data bus. The switch is configured so as to switch a coupling between a data bus coupled to the media interface group and a data bus coupled to any of multiple nonvolatile chips that are coupled to this switch. The control circuit partitions write-target data into multiple data elements, switches a coupling by controlling the multiple switches, and distributively sends the multiple data elements to multiple nonvolatile chips.
申请公布号 US8949511(B2) 申请公布日期 2015.02.03
申请号 US201113379223 申请日期 2011.09.30
申请人 Hitachi, Ltd. 发明人 Ishikawa Atsushi;Sonoda Koji;Uehara Go;Ogawa Junji;Koseki Hideyuki
分类号 G06F12/02;G06F13/16;G06F3/06 主分类号 G06F12/02
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. A flash memory package comprising: a flash memory controller; a first data bus coupled to the flash memory controller; a second data bus coupled to the flash memory controller; multiple third data buses; multiple fourth data buses; multiple first flash memory chips, each of the multiple first flash memory chips coupled to one of the multiple third data buses; multiple second flash memory chips, each of the multiple second flash memory chips coupled to one of the multiple fourth data buses; a first switch coupled to the first data bus and selectively coupled to any one of the multiple third data buses; a second switch coupled to the second data bus and selectively coupled to any one of the multiple fourth data buses; and a switching signal line coupled to the flash memory controller and the first switch, wherein the first switch is configured to be coupled directly to the second switch for sending a switching signal using the switching signal line, so that the flash memory controller accesses, substantially in parallel, the one of the multiple first flash memory chips and the one of the multiple second flash memory chips by supplying one switching signal to both the first switch and the second switch using the switching signal line.
地址 Tokyo JP