发明名称 |
Semiconductor memory devices |
摘要 |
A semiconductor memory device includes at least one memory cell connected to an internal voltage line that receives a cell power supply voltage and a write assist circuit connected to the internal voltage line. The write assist circuit lowers a level of the cell power supply voltage to a target level during a first period of a write operation on the memory cell and maintains the level of the cell power supply voltage at the target level during a second period of the write operation based on a write assist control signal. The second period succeeds the first period. |
申请公布号 |
US8947951(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US201313836902 |
申请日期 |
2013.03.15 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Baeck Sang-Yeop;Kim Jin-Sung;Yoon Jang-Hwan |
分类号 |
G11C7/00;G11C7/12 |
主分类号 |
G11C7/00 |
代理机构 |
Ellsworth IP Group, PLLC |
代理人 |
Ellsworth IP Group, PLLC |
主权项 |
1. A semiconductor memory device comprising:
at least one memory cell connected to an internal voltage line that receives a cell power supply voltage; a write assist circuit connected to the internal voltage line, the write assist circuit configured to lower a level of the cell power supply voltage to a target level during a first period of a write operation on the memory cell and configured to maintain the level of the cell power supply voltage at the target level during a second period of the write operation based on a write assist control signal, the second period succeeding the first period; and a precharge circuit connected between a power supply voltage and the internal voltage line, the precharge circuit configured to precharge the internal voltage line. |
地址 |
Suwon-si KR |