发明名称 |
Semiconductor device having elevated structure and method of manufacturing the same |
摘要 |
A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for filling at least a portion of a space surrounded by the spacer and the top surface of the gate stack. A top surface of the spacer is higher than a top surface of the gate stack. |
申请公布号 |
US8946828(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US201012702683 |
申请日期 |
2010.02.09 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Sun Sey-Ping;Lee Tsung-Lin;Lin Chin-Hsiang;Chang Chih-Hao;Yeh Chen-Nan;Jong Chao-An |
分类号 |
H01L29/78;H01L21/768;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
Lowe Hauptman & Ham, LLP |
代理人 |
Lowe Hauptman & Ham, LLP |
主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate having at least an active area on a top surface thereof; a gate stack formed over the active area, said active area further comprising source and drain regions adjacent the gate stack; a spacer formed on sidewalls of the gate stack; an elevated contact structure extending upwardly from the source or drain region to have a top surface higher than a top surface of the gate stack; a protection layer overlying the top surface of the gate stack, the top surface of the elevated contact structure, and the spacer, the protection layer filling at least a portion of a space formed between the top surface of the elevated contact structure and the top surface of the gate stack; a dielectric layer overlying the protection layer, the dielectric layer comprising a material different from a material of the protection layer; and a contact hole extending from a top surface of the dielectric layer, through the dielectric layer, through a partial thickness of the protection layer, and to the top surface of the elevated contact structure without reaching the spacer. |
地址 |
TW |