发明名称 SPUTTERING TARGET JOINT BODY AND FILM DEPOSITION METHOD USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a joint body of a sputtering target and a backing plate, capable of effectively reducing the generation of particles during sputtering from the initial stage to the last stage of a target lifetime and simply obtained, and a film deposition method using the same.SOLUTION: In a sputtering target joint body having a sputtering target 1 joined with a backing plate 2 for holding the sputtering target, both the sputtering target 1 and the backing plate 2 are sintered bodies and are constituted of a dielectric body having a relative dielectric constant of 2-1500.</p>
申请公布号 JP2015021136(A) 申请公布日期 2015.02.02
申请号 JP20130147194 申请日期 2013.07.16
申请人 KOJUNDO CHEM LAB CO LTD 发明人 UNNO TAKAHIRO;SHIBAYAMA TAKASANE
分类号 C23C14/34 主分类号 C23C14/34
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