| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows preventing the occurrence of leakage current even with a defect in a fixed charge film, and to provide a method of manufacturing the same.SOLUTION: A photoelectric conversion part 1 of a semiconductor device is formed on inside a primary surface of a semiconductor substrate 100 on a side in which light is incident. An insulating film 2 is formed on the primary surface. A fixed charge film 3 is formed on the insulating film 2. An impurity region 4 is formed on inside the semiconductor substrate 100 directly under a generation position of a defect 31 occurring in the fixed charge film 3. |
