| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a formation method of the same, which can increase bonding force of connection electrodes between device substrates while reducing a pitch between the connection electrodes in a plane of the device substrate.SOLUTION: A semiconductor device manufacturing method comprises: forming an opening in a first semiconductor substrate 1; embedding a first metal in the opening; forming a first connection electrode 102 having a shape projecting from the first semiconductor substrate 1 by performing chemical mechanical polishing under a condition where a polishing rate becomes larger in a region around the opening on the first semiconductor substrate 1 compared with the first metal; and laminating the first semiconductor substrate 1 and a second semiconductor substrate 2 on which a second connection electrode 202 is provided so as to oppose the first and second connection electrodes 102, 202 and applying pressure and heat to the first semiconductor substrate 1 and the second semiconductor substrate 2 thereby to diffusion bond the first and second connection electrodes 102, 202. |
