发明名称 |
APPARATUS FOR MAKING SILICON CARBIDE CRYSTAL, METHOD OF MANUFACTURING THE APPARATUS, AND METHOD OF MAKING SILICON CARBIDE CRYSTAL USING THE APPARATUS |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an apparatus that can efficiently make a silicon carbide crystal having excellent quality and that has a graphite-made member the inner wall of which is stably covered with heat-resistant metal carbide.SOLUTION: An apparatus for making silicon carbide crystal of the present invention includes a graphite-made member 3 which guides, inside a crucible 1, gaseous starting material formed by subliming raw material for sublimation to a seed crystal arrangement part side. The guide member 3 has a first opening part 31 formed at one end on the side of the seed crystal arrangement part; a second opening part 32 which is formed at one end on the side of the raw material for sublimation and has larger opening area than the first opening part; a tapered side wall part 33 which extends from the second opening part 32 to the first opening part 31; and a ceiling part 34 which extends from the second opening part 32 to an inner wall of a side part of the crucible 1. The ceiling part 34 of the guide member is covered with a first covering member 44 made of heat-resistant metal carbide, the side wall part 33 of the guide member 3 is covered with a second covering member 43 made of heat-resistant metal carbide and having a flange part 43a at one end, and the first covering member 44 is supported by the flange part 43c of the second covering member 43.</p> |
申请公布号 |
JP2015020938(A) |
申请公布日期 |
2015.02.02 |
申请号 |
JP20130151733 |
申请日期 |
2013.07.22 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
HORI TSUTOMU;UETA SHUNSAKU;KAWASE TOMOHIRO |
分类号 |
C30B29/36;C30B23/06 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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