| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress metallic contamination and generation of a foreign matter on the stage surface of a plasma processing apparatus.SOLUTION: A plasma processing apparatus includes a processing chamber, a processing gas supply section supplying a high frequency power for plasma generation and processing gas, an exhaust section for reducing the pressure of the processing chamber, a stage for mounting a work piece, and a bias power supply for accelerating ions impinging on the work piece, and deposits an yttria (YO) film on the surface of the stage by chemical vapor deposition or physical vapor growth. By the coverage effect of chemical vapor deposition or physical vapor growth, a protrusion having a curved surface on the stage surface, or a protrusion having a round shape on the outer periphery of the upper surface thereof is deposited.</p> |
