| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a diffused wafer capable of reducing the number of stacking faults in the diffused wafer having a two-layer structure of an impurity diffused layer and an un-diffused layer even if manufactured from FZ single crystal silicon.SOLUTION: In a method of manufacturing a diffused wafer, a silicon wafer consisting of a two-layer structure of an impurity diffused layer and an un-diffused layer is produced, from a silicon wafer having the impurity diffused layers into which impurities are diffused from surfaces and the un-diffused layer into which no impurity is diffused, by grinding one of the impurity diffused layers or by dividing into two along a center line in a thickness direction. As a raw material silicon wafer to be diffused with the impurities, a silicon wafer whose nitrogen concentration in a crystal is 1.5×10atoms/cmor less, manufactured from an FZ single crystal silicon ingot in at least a part of which nitrogen concentration in the crystal is 1.5×10atoms/cmor less, is used. |
