摘要 |
<p>The semiconductor module is produced by integrating technique and contains a number of components on a common semiconductor substrate block. Several such substrate blocks (Si), which are separated by a groove (V) are epitaxially deposited on a common saphire insulating support (Saph). Preferably the module contains bipolar components (B, F). One of the components may be a field-effect transistor. One substrate block thickness may be greater than the penetration depth of layers of components in the surface of the substrate block. If one substrate block is thinner than 1 micron, the layers in its surface reach down to the support surface. At least one of the substrate blocks contains parts of a memory, with complementary electronic system in at least one other substrate block.</p> |