发明名称 Single-chip twin light source light emitting device
摘要 <p>Disclosed is a single-chip twin light source light emitting device including a first epitaxial layer, a substrate, and a second epitaxial layer. The first epitaxial layer includes a first n-type semiconductor layer with a n-type conducting structure, a first light emitting layer with a multi-quantum well structure, and a first p-type semiconductor layer with a p-type conducting structure. The second epitaxial layer includes a second n-type semiconductor layer with a n-type conducting structure, a second light emitting layer with a multi-quantum well structure, and a second p-type semiconductor layer with a p-type conducting structure. Therefore, the light emitting device can emit one-color or two-color light by controlling the first epitaxial layer and the second epitaxial layer respectively.</p>
申请公布号 KR101489082(B1) 申请公布日期 2015.02.02
申请号 KR20130087114 申请日期 2013.07.24
申请人 发明人
分类号 H01L33/08;H01L33/10;H01L33/36;H01L33/48 主分类号 H01L33/08
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