发明名称 絶縁キャパシタを用いた容量絶縁方式の半導体リレー
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor relay capable of achieving availability at a low electric current and on the high temperature side, high safety and high driving power coefficient. <P>SOLUTION: The semiconductor relay 1 includes: an oscillation circuit 10 that is connected to a first and a second input terminals T<SB POS="POST">i1</SB>, T<SB POS="POST">i2</SB>, oscillates in response to an input signal and that generates a signal; a booster circuit 20 that receives a signal of the oscillation circuit 10 and generates a voltage; a charge/discharge circuit 30 that charges and discharges the voltage generated by the booster circuit 20; and an output section 40 comprised of MOSFETs 41a, 41b for output with the gate and the source connected to the charge/discharge circuit 30. The drain terminal of the MOSFETs 41a, 41b for output is made to serve as a first and a second output terminals T<SB POS="POST">o1</SB>, T<SB POS="POST">o2</SB>. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5660492(B2) 申请公布日期 2015.01.28
申请号 JP20100275396 申请日期 2010.12.10
申请人 发明人
分类号 H03K17/78 主分类号 H03K17/78
代理机构 代理人
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