发明名称 化学気相成長用の流入口要素及び化学気相成長方法
摘要 A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis.
申请公布号 JP5662334(B2) 申请公布日期 2015.01.28
申请号 JP20110539676 申请日期 2009.12.03
申请人 发明人
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
代理机构 代理人
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