发明名称 グラフェン膜のエピタキシャル成長方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a large-scale, uniform and high-quality graphene film and a method for producing the same. <P>SOLUTION: The graphene film 102 is formed on a catalytic thin film by depositing the catalytic thin film 101 on a crystalline substrate 100, heat-treating the catalytic thin film to form a highly-ordered and selectively-oriented crystalline catalytic thin film, heating a gaseous carbon source, and cooling the crystalline catalytic thin film. A catalytic material of the catalytic thin film includes one element or a plurality of elements selected from a group comprising Ni, Pt, Co, Fe, Al, Cr, Cu, Mg, Mn, Rh, Ti, Pd, Ru, Ir and Re, and the thickness of the catalytic thin film lies within a range of about 1 nm to about 2 mm. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP5660425(B2) 申请公布日期 2015.01.28
申请号 JP20100047225 申请日期 2010.03.04
申请人 发明人
分类号 C30B29/66;C01B31/02;C23C16/26;C30B29/02 主分类号 C30B29/66
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