| 摘要 |
<p>The present invention relates to a tungsten precursor represented by chemical formula 1. The tungsten precursor is a precursor containing sulfur, improves thermal stability and volatility and does not need to add additional sulfur during thin film manufacture, thereby being able to form a high quality tungsten sulfide thin film. (In formula, R_1 is a linear or a branched alkyl group of C1-C4. R_2 and R_3 are a linear or branched alkyl group of C1-C10, respectively. R_4 and R_5 are respectively a linear or a branched alkyl group of C1-C10 or a linear or branched fluoroalkyl group of C1-C10. And n is an integer of 1-3.).</p> |
