| 摘要 |
The light emitting device includes a substrate (110), a first conductive type semiconductor layer (130), an active layer (140), a second conductive type semiconductor layer (150), and a light-transmitting electrode layer (160). The second conductive type semiconductor layer has a thickness satisfying Equation: 2·¦1+¦2 = N·2À±”, (0‰¤”‰¤À/2), where ¦1 is a phase change that is generated when light of a vertical direction passes through the second conductive type semiconductor layer, ¦2 is a phase change that is generated when the light is reflected by the light-transmitting electrode layer, and N is a natural number. |
