发明名称 |
SILICON-BASED NANOSCALE RESISTIVE DEVICE WITH ADJUSTABLE RESISTANCE |
摘要 |
A non-volatile solid state resistive device that includes a first electrode, a p-type poly-silicon second electrode, and a non-crystalline silicon nanostructure electrically connected between the electrodes. The nanostructure has a resistance that is adjustable in response to a voltage being applied to the nanostructure via the electrodes. The nanostructure can be formed as a nanopillar embedded in an insulating layer located between the electrodes. The first electrode can be a silver or other electrically conductive metal electrode. A third (metal) electrode can be connected to the p-type poly-silicon second electrode at a location adjacent the nanostructure to permit connection of the two metal electrodes to other circuitry. The resistive device can be used as a unit memory cell of a digital non-volatile memory device to store one or more bits of digital data by varying its resistance between two or more values. |
申请公布号 |
EP2342750(B1) |
申请公布日期 |
2015.01.28 |
申请号 |
EP20090819890 |
申请日期 |
2009.10.08 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF MICHIGAN |
发明人 |
LU, WEI;JO, SUNG, HYUN;KIM, KUK-HWAN |
分类号 |
G11C13/00;G11C11/56;H01L27/24 |
主分类号 |
G11C13/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|