发明名称 SILICON-BASED NANOSCALE RESISTIVE DEVICE WITH ADJUSTABLE RESISTANCE
摘要 A non-volatile solid state resistive device that includes a first electrode, a p-type poly-silicon second electrode, and a non-crystalline silicon nanostructure electrically connected between the electrodes. The nanostructure has a resistance that is adjustable in response to a voltage being applied to the nanostructure via the electrodes. The nanostructure can be formed as a nanopillar embedded in an insulating layer located between the electrodes. The first electrode can be a silver or other electrically conductive metal electrode. A third (metal) electrode can be connected to the p-type poly-silicon second electrode at a location adjacent the nanostructure to permit connection of the two metal electrodes to other circuitry. The resistive device can be used as a unit memory cell of a digital non-volatile memory device to store one or more bits of digital data by varying its resistance between two or more values.
申请公布号 EP2342750(B1) 申请公布日期 2015.01.28
申请号 EP20090819890 申请日期 2009.10.08
申请人 THE REGENTS OF THE UNIVERSITY OF MICHIGAN 发明人 LU, WEI;JO, SUNG, HYUN;KIM, KUK-HWAN
分类号 G11C13/00;G11C11/56;H01L27/24 主分类号 G11C13/00
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