| 发明名称 |
A method for selective removal of high-K material |
| 摘要 |
<p>The present invention relates to a method for selectively removing a high-k material comprising the steps of: providing a high-k material on a semiconductor substrate, and subjecting said high-k material to a solution comprising HF, an organic compound and an inorganic acid.</p> |
| 申请公布号 |
EP1511074(B1) |
申请公布日期 |
2015.01.28 |
| 申请号 |
EP20040447059 |
申请日期 |
2004.03.09 |
| 申请人 |
IMEC |
发明人 |
PARASCHIV, VASILE;CLAES, MARTINE |
| 分类号 |
H01L21/311;C23F1/00;H01L21/336 |
主分类号 |
H01L21/311 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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