| 摘要 |
<p>The present technology relates to a semiconductor device and to an operating method thereof. The semiconductor device includes memory blocks; page buffers; a selection switch unit; and a control circuit. The memory blocks are vertically arranged on a semiconductor substrate. The device includes multiple strings including drain select transistors connected to the odd or even drain-select lines, memory cells connected to word lines; and source select lines connected to the odd or even drain-select lines. The adjacent strings share the bit lines and source lines. The page buffers are configured to store data. The selection switch unit is configured to transmit the various voltages supplied from the outside and the data stored in the page buffers to the bit lines and source lines. The control circuit is configured to control the page buffers and the selection switch unit.</p> |
