发明名称 ウエハバイアス電位を測定するための方法および装置
摘要 <p>A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.</p>
申请公布号 JP5661113(B2) 申请公布日期 2015.01.28
申请号 JP20120525242 申请日期 2010.08.18
申请人 发明人
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
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