| 摘要 |
<p>A layer is deposited onto a semiconductor wafer by CVD in a process chamber having upper and lower covers, wherein the wafer front side temperature is measured; the wafer is heated to deposition temperature; the temperature of the upper process chamber cover is controlled to a target temperature by measuring the temperature of the center of the outer surface of the upper cover as the value of a controlled variable of an upper cover temperature control loop; a gas flow rate of process gas for depositing the layer is set; and a layer is deposited on the heated wafer front side during control of the upper cover temperature to the target temperature. A process chamber suitable therefor has a sensor for measuring the upper cover outer surface center temperature and a controller for controlling this temperature to a predetermined value.</p> |
