| 摘要 |
The present invention addresses the problem of providing a method for manufacturing an SGT and providing a structure of an SGT obtained as a result of the method, the SGT having a structure in which the upper portion of a self-aligned pillar-shaped semiconductor layer is made to function as an n-type semiconductor layer or a p-type semiconductor layer depending on the work-function difference between a metal and a semiconductor, the method being a gate-last process in which a fin-shaped semiconductor layer, a pillar-shaped semiconductor layer, a gate electrode, and gate wiring are formed using two masks. The present invention resolves the problem by being characterized in having a sixth step for: depositing a second gate insulating film around a pillar-shaped semiconductor layer as well as on the gate electrode and the gate wiring; removing the second gate insulating film on a part of the gate wiring; depositing a second metal; performing etch-back; removing the second gate insulating film on the pillar-shaped semiconductor layer; depositing a third metal; and etching a part of the third metal and the second metal to form a first contact in which the second metal surrounds the side wall of the upper portion of the pillar-shaped semiconductor layer, a second contact connecting the upper portion of the first contact and the upper portion of the pillar-shaped semiconductor layer, and a third contact comprising the second metal formed on the gate wiring and the third metal. |
