| 发明名称 |
RING-SHAPED MAGNETORESISTIVE MEMORY DEVICE AND WRITING METHOD THEREOF |
| 摘要 |
A ring-shaped magnetoresistive memory device includes a ring-shaped magnetoresistive memory cell, a first conductor, and a second conductor. The first conductor is positioned on a first surface of the ring-shaped magnetoresistive memory cell for generating a first magnetic field pulse. The second conductor is positioned on a second surface of the ring-shaped magnetoresistive memory cell for generating a second magnetic field pulse. The first surface is opposite to the second surface. An extension direction of the first conductor is perpendicular to an extension direction of the second conductor. A time delay is between the first magnetic field pulse and the second magnetic field pulse. |
| 申请公布号 |
US2015023092(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201414267904 |
申请日期 |
2014.05.01 |
| 申请人 |
NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
YANG Jyh-Shinn;LEE Ching-Ming;WU Te-Ho |
| 分类号 |
G11C11/16;H01L43/02 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A ring-shaped magnetoresistive memory device, comprising:
a ring-shaped magnetoresistive memory cell; a first conductor positioned on a first surface of the ring-shaped magnetoresistive memory cell for generating a first magnetic field pulse; and a second conductor positioned on a second surface of the ring-shaped magnetoresistive memory cell for generating a second magnetic field pulse; wherein the first surface is opposite to the second surface, an extension direction of the first conductor is perpendicular to an extension direction of the second conductor, and a time delay is between the first magnetic field pulse and the second magnetic field pulse. |
| 地址 |
Yunlin County TW |
