| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves more data rewritable times and a higher data rewrite speed, and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor substrate SUB; a first gate electrode CG; a second gate electrode MG; an insulation film ONI; and a pair of source/drain regions MS, MD. The first gate electrode CG is composed of a semiconductor layer containing a first conductivity type impurity, and the second gate electrode MG is composed of a semiconductor layer containing a second conductivity type impurity, and the source/drain regions MS, MD contain a first conductivity type impurity. The source region MS includes a first source region MS1 and a second source region MS2 which has a concentration of the first conductivity type impurity higher than that of the first source region MS1. |
