| 发明名称 |
Lateral/Vertical Semiconductor Device with Embedded Isolator |
| 摘要 |
A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface. |
| 申请公布号 |
US2015021664(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201414333890 |
申请日期 |
2014.07.17 |
| 申请人 |
Sensor Electronic Technology, Inc. |
发明人 |
Simin Grigory;Gaevski Mikhail;Shur Michael;Gaska Remigijus |
| 分类号 |
H01L29/778;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A lateral/vertical device comprising:
a device structure including a device channel, wherein the device channel includes a lateral portion, a vertical portion, and a transition region between the lateral portion and the vertical portion; a first contact to the lateral portion of the device channel; a gate to the transition region of the device channel; a second contact to the vertical portion of the device channel, wherein the first and second contacts are located on opposing surfaces of the device structure; and a set of insulating layers located in the device structure between the lateral portion of the device channel and the second contact, wherein an opening in the set of insulating layers defines the transition region of the device channel. |
| 地址 |
Columbia SC US |
