METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE

摘要

The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming a resistive switching material comprising an oxide of a pnictogen element by atomic layer deposition. The method additionally includes forming a metallic layer comprising the pnictogen element by atomic layer deposition (ALD). The resistive switching material is interposed between the first electrode and the metallic layer.

主权项

1. A method of forming a resistive random access memory device, comprising forming a resistive random access memory cell, wherein forming the resistive random access memory cell comprises:
providing a first electrode; forming a resistive switching material comprising an oxide of a pnictogen element by atomic layer deposition; and forming a metallic layer comprising the pnictogen element by atomic layer deposition, wherein the resistive switching material is interposed between the first electrode and the metallic layer.