STRUCTURES AND METHODS INTEGRATING DIFFERENT FIN DEVICE ARCHITECTURES

摘要

Semiconductor structures and fabrication methods are provided integrating different fin device architectures on a common wafer, for instance, within a common functional device area of the wafer. The method includes: facilitating fabricating multiple fin device architectures within a common functional device wafer area by: providing a wafer with at least one fin disposed over a substrate, the fin including an isolation layer; modifying the fin(s) in a first region of the fin(s), while protecting the fin in a second region of the fin(s); and proceeding with forming one or more fin devices of a first architectural type in the first region and one or more fin devices of a second architectural type in the second region. The first architectural type and the second architectural type are different fin device architectures, such as different fin device isolation architectures, different fin type transistor architectures, or different fin-type devices or structures.

主权项

1. A method comprising:
facilitating fabricating multiple fin device architectures, the facilitating fabricating comprising:
providing a wafer with at least one fin disposed over a substrate, the at least one fin including an isolation layer;modifying the at least one fin in a first fin region, while protecting the at least one fin in a second fin region thereof; andproceeding with forming at least one fin device of a first architectural type in the first fin region and at least one fin device of a second architectural type in the second fin region, wherein the first architectural type and the second architectural type comprise different fin device architectures.