MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE

摘要

An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.

主权项

1. An MRAM cell comprising:
a free magnetic region; a fixed magnetic region consisting essentially of an unpinned, fixed synthetic antiferromagnetic (SAF) magnetic structure, wherein the unpinned, fixed SAF magnetic structure comprises:
a first layer of one or more ferromagnetic materials, wherein the one or more ferromagnetic materials includes cobalt,a second layer,a third layer of one or more ferromagnetic materials, anda first anti-ferromagnetic coupling layer, wherein:
the first anti-ferromagnetic coupling layer is disposed between the first and third layers, andthe second layer is disposed between the first layer and the first anti-ferromagnetic coupling layer; and a dielectric layer disposed between the free magnetic region and the unpinned, fixed SAF magnetic structure.