| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a sufficient mechanical strength while increasing a breakdown voltage by forming a cavity region between an embedded insulation film and a substrate.SOLUTION: A semiconductor device comprises: a substrate 12; an embedded insulation film 14 formed on the substrate; an SOI layer 20 formed on the embedded insulation film; an insulation film 22 for separating the SOI layer into a first SOI layer 20a and a second SOI layer 20b insulated from the first SOI layer; an element 30 formed in the first SOI layer; an electrode 70 which has a pad 70a on one end, which is located directly above the second SOI layer and the other end is connected to the first SOI layer; and a cavity region 18 between the embedded insulation film directly below the first SOI layer and the substrate, in which at least a part of the embedded insulation film directly below the second SOI layer directly touches the substrate. |
