HYBRID BONDING WITH THROUGH SUBSTRATE VIA (TSV)

摘要

Embodiments of forming a semiconductor device structure are provided. The semiconductor device structure includes a first semiconductor wafer and a second semiconductor wafer bonded via a hybrid bonding structure, and the hybrid bonding structure includes a first conductive material embedded in a first polymer material and a second conductive material embedded in a second polymer material. The first conductive material is bonded to the second conductive material and the first polymer material is bonded to the second polymer material. The semiconductor device also includes at least one through silicon via (TSV) extending from a bottom surface of the first semiconductor wafer to a metallization structure of the first semiconductor wafer. The semiconductor device structure also includes an interconnect structure formed over the bottom surface of the first semiconductor wafer, and the interconnect structure is electrically connected to the metallization structure via the TSV.

主权项

1. A semiconductor device structure, comprising:
a first semiconductor wafer bonded to a second semiconductor wafer via a hybrid bonding structure, wherein the hybrid bonding structure comprises:
a first conductive material embedded in a first polymer material; anda second conductive material embedded in a second polymer material, wherein the first conductive material is bonded to the second conductive material and the first polymer material is bonded to the second polymer material; and at least one through substrate via (TSV) extending from a bottom surface of the first semiconductor wafer to a metallization structure of the first semiconductor wafer; and an interconnect structure formed over the bottom surface of the first semiconductor wafer, wherein the interconnect structure is electrically connected to the metallization structure via the TSV.