| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes; a semiconductor layer mainly made of GaN; a protective film provided to have electrical insulation property and configured to coat the semiconductor layer; and an electrode provided to have electrical conductivity and configured to form a Schottky junction with the semiconductor layer. Tthe protective film includes: a first layer made of Al2O3 and arranged adjacent to the semiconductor layer; a second layer made of an electrical insulation material different from Al2O3 and formed on the first layer; and an opening structure formed to pass through the first layer and the second layer. The electrode is located inside of the opening structure. |
| 申请公布号 |
US2015021617(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201414323065 |
申请日期 |
2014.07.03 |
| 申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
UENO Yukihisa;OKA Toru;HASEGAWA Kazuya |
| 分类号 |
H01L23/31;H01L29/47;H01L29/20 |
主分类号 |
H01L23/31 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor layer mainly made of gallium nitride (GaN); a protective film provided to have electrical insulation property and configured to coat the semiconductor layer; and an electrode provided to have electrical conductivity and configured to form a Schottky junction with the semiconductor layer, wherein the protective film includes:
a first layer made of aluminum oxide (Al2O3) and arranged adjacent to the semiconductor layer;a second layer made of an electrical insulation material different from aluminum oxide (Al2O3) and formed on the first layer; andan opening structure formed to pass through the first layer and the second layer, wherein the electrode is located inside of the opening structure. |
| 地址 |
Kiyosu-shi JP |
