发明名称 |
C-V CHARACTERISTIC MEASUREMENT SYSTEM AND METHOD FOR MEASURING C-V CHARACTERISTICS |
摘要 |
Proposed are a C-V characteristic measurement system and a method of measuring C-V characteristics that allow for less change in resistivity with time in repeated measurement of a single crystal silicon wafer using a mercury electrode, as compared to those in the related arts. Measurement is conducted with use of a C-V characteristic measurement system including: a mercury probe 30 for putting mercury as an electrode to contact with a single crystal silicon wafer; an LCR meter 40 for forming a depletion layer by supplying a high-frequency wave to the single crystal silicon wafer via the mercury probe 30 to apply a reverse bias voltage to the single crystal silicon wafer while measuring a capacitance of the depletion layer; analysis software for calculating C-V characteristics based on the reverse bias voltage and the capacitance of the depletion layer; and a static electricity removing device 20 for removing static electricity of the single crystal silicon wafer. |
申请公布号 |
US2015025826(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
US201314380076 |
申请日期 |
2013.02.19 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
Kume Fumitaka;Kashino Hisatoshi |
分类号 |
G01R27/08;G01R1/067 |
主分类号 |
G01R27/08 |
代理机构 |
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代理人 |
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主权项 |
1. A C-V characteristic measurement system, comprising:
a mercury probe for putting mercury as an electrode to contact with a single crystal silicon wafer; an LCR meter for forming a depletion layer by supplying a high-frequency wave to the single crystal silicon wafer via the mercury probe to apply a reverse bias voltage to the silicon single crystal wafer while measuring a capacitance of the depletion layer; analysis software for calculating C-V characteristics based on the reverse bias voltage and the capacitance of the depletion layer; and a static electricity removing device for removing static electricity of the single crystal silicon wafer. |
地址 |
Tokyo JP |