发明名称 Dielectric Structure for Color Filter Array
摘要 An integrated circuit device in which an array of photodiodes are formed at the surface of a semiconductor substrate. A dielectric structure comprising multiple layers of dielectric is formed over the photodiodes. An array of color filters is formed over the photodiodes and within the dielectric structure. An interface between two layers of the dielectric structure is aligned with the bases of the color filters. The interface provides an etch stops that allows the depths of the trenches in which the color filters are formed to be well controlled.
申请公布号 US2015021728(A1) 申请公布日期 2015.01.22
申请号 US201313943907 申请日期 2013.07.17
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Huang Yin Chieh;Lee Kuo-Cheng;Jeng Chi-Cherng
分类号 H01L31/0232;H01L31/18 主分类号 H01L31/0232
代理机构 代理人
主权项 1. An integrated circuit device, comprising: a semiconductor substrate having a surface; an array of photodiodes disposed along the surface; a dielectric structure disposed over the array of photodiodes, the dielectric structure comprising a first dielectric layer overlying a second dielectric layer, wherein the first dielectric layer and the second dielectric layer have different chemical compositions; and an array of color filters disposed within the dielectric structure, and abutting the second dielectric layer, wherein the first dielectric layer is disposed at positions laterally separating adjacent color filters within the array of color filters.
地址 Hsin-Chu TW