| 摘要 |
Provided are a backlit image sensor and a manufacturing method therefor. The backlit image sensor comprises: a silicon wafer layer (1), which comprises a photodiode (101) used for photoreception and for generating an electrical signal, where the silicon wafer layer (1) is provided with a front surface and a rear surface; a backend layer (2), which is arranged on the front surface of the silicon wafer layer (1), where the backend layer (2) comprises a transistor gate electrode, a gate oxide layer, lead layers (203 and 204), and dielectric layers (2011 and 2012); and, a light incidence layer (3), which comprises a micro-lens layer (301) and an optical filter film layer (302), where the light incidence layer (3) is arranged at the rear surface of the silicon wafer layer (1). The backend layer (2) also comprises: a light absorbing layer (202), which is arranged at a predetermined position in the backend layer (2), where the light absorbing layer (202) is used for absorbing a light transmitted from the silicon wafer layer (1). As the light transmitted from a component layer is absorbed via the light absorbing layer (202) that is employed, the probability of the transmitted light being reflected to another pixel is greatly reduced, thus reducing crosstalk between adjacent pixels. |
