| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a Schottky barrier diode formed in the first well; and a PN junction diode formed in the second well, with an impurity concentration of the PN junction thereof set higher than an impurity concentration of the Schottky junction of the Schottky barrier diode, and being connected antiparallel with the Schottky barrier diode. |
| 申请公布号 |
US2015021732(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201414307097 |
申请日期 |
2014.06.17 |
| 申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
Kanai Dai;Ema Taiji;Fujita Kazushi |
| 分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a Schottky barrier diode formed in the first well; and a first PN junction diode formed in the second well, with an impurity concentration of the PN junction thereof set higher than an impurity concentration of the Schottky junction of the Schottky barrier diode, acid being connected antiparallel with the Schottky barrier diode. |
| 地址 |
Yokohama JP |
