FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THEREOF

摘要

According to this GaN-based HFET, resistivity ρ of a semi-insulating film forming a gate insulating film is 3.9×109 Ωcm. The value of this resistivity ρ is a value derived when the current density is 6.25×10−4 (A/cm2). By inclusion of the gate insulating film by a semi-insulating film having a resistivity ρ=3.9×109 Ωcm, a withstand voltage of 1000 V can be obtained. Meanwhile, the withstand voltage abruptly drops as the resistivity of the gate insulating film exceeds 1×1011 Ωcm, and the gate leak current increases when the resistivity of the gate insulating film drops below 1×107 Ωcm.

主权项

1. A field-effect transistor comprising:
a nitride semiconductor layer; a source electrode and a drain electrode which are formed, at least partly, on the nitride semiconductor layer or within the nitride semiconductor layer and which are disposed with a distance to each other; a gate electrode formed on the nitride semiconductor layer and disposed between the source electrode and the drain electrode; and a gate insulating film formed between the gate electrode and the nitride semiconductor layer, wherein the gate insulating film is a semi-insulating film having a resistivity of 107 Ωcm to 1011 Ωcm.