发明名称 VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus for stabilizing a supply amount of organic metal in a process gas, with a simple configuration.SOLUTION: A vapor phase growth apparatus according to an embodiment comprises: a reaction chamber; a gas supply path which is connected to an organic metal supply source through a first connection part, is connected to a carrier gas supply source, and supplies a process gas including organic metal and a carrier gas to the reaction chamber; a gas discharge path which is connected to the organic metal supply source through a second connection part, and discharges the process gas to the outside of the apparatus; a first mass flow controller provided on the carrier gas supply source side of the gas supply path; a first adjustment unit provided on the reaction chamber side of the gas supply path; a second adjustment unit provided on the outside of the apparatus of the gas discharge path; and a communication path for making the gas supply path communicate with the gas discharge path. Either of the first and second adjustment units is a back pressure regulator, and the other is a mass flow controller.
申请公布号 JP2015015429(A) 申请公布日期 2015.01.22
申请号 JP20130142616 申请日期 2013.07.08
申请人 NUFLARE TECHNOLOGY INC 发明人 YAMADA TAKUMI;SATO YUSUKE
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
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