| 摘要 |
Disclosed are a semiconductor Fin manufacturing method and a Fin FET (Fin Field-Effect Transistor) device manufacturing method. The semiconductor fin manufacturing method comprises: providing a substrate; selectively and epitaxially growing a first mask layer in a predetermined region on the substrate; with the first mask layer serving as a mask, selectively and epitaxially growing a first epitaxial layer on the substrate; and with the first epitaxial layer serving as a mask, removing the first mask layer and a part of the substrate at the bottom of the first mask layer using an anisotropic etching method, in order to form a fin at the bottom of the first epitaxial layer. According to the abovementioned technical solution, by combining selective epitaxial growth and the anisotropic etching process, the perpendicularity of the semiconductor fin to the surface of a gate oxide layer can be ensured without the use of photolithography techniques, and furthermore, the roughness on the surface of the semiconductor fin is reduced, and the fin with a smooth side surface is formed. |
