| 摘要 |
<p>Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga-Al alloy 4, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate 3 in the melt of the Ga-Al alloy 4. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C and not more than 1500 degrees C, thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.</p> |
