| 摘要 |
<p>The present invention relates to a light emitting diode (LED) chip based on metal insulator transition (MIT) and to a method for manufacturing the same. The method for manufacturing the LED chip includes the steps of: deposing a first MIT thin film on a p-GaN layer of a wafer after preparing for a wafer including a buffer layer deposited on a sapphire substrate, an n-GaN layer deposited on the buffer layer, a light emitting layer deposited on the n-GaN layer, and a p-GaN layer deposited on the light emitting layer; etching the first MIT thin film suitable for the size of a p-pad metal; depositing transparent electrode material on the first MIT thin film and the p-GaN layer; etching the transparent electrode material which the n-GaN layer is deposited to be exposed, the p-GaN layer, and the light emitting layer, which is suitable for the size to deposit an n-pad metal; depositing a second MIT thin film on the exposed n-GaN layer; etching the transparent electrode material to expose the first MIT thin film; and depositing the p-pad metal on the exposed first MIT thin film and the n-pad metal on the second MIT thin film.</p> |
