发明名称 |
A NON-VOLATILE MEMORY DEVICE AND A METHOD OF OPERATING SAME |
摘要 |
<p>An array of non-volatile memory cells in a semiconductor substrate of a first conductivity type. Each memory cell comprises first and second regions of a second conductivity type on a surface of the substrate, with a channel region therebetween. A word line overlies one portion of the channel region, is adjacent to the first region, and has little or no overlap with the first region. A floating gate overlies another portion of the channel region, and is adjacent to the first portion and the second region. A coupling gate overlies the floating gate. An erase gate overlies the second region. A bit line is connected to the first region. A negative charge pump circuit generates a negative voltage. A control circuit generates a plurality of control signals in response to receiving a command signal, and applies the negative voltage to the word line of unselected memory cells.</p> |
申请公布号 |
EP2826036(A1) |
申请公布日期 |
2015.01.21 |
申请号 |
EP20130761667 |
申请日期 |
2013.02.07 |
申请人 |
SILICON STORAGE TECHNOLOGY INC. |
发明人 |
TRAN, HIEU, VAN;NGUYEN, HUNG, QUOC;DO, NHAN |
分类号 |
G11C16/00 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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