发明名称 SUBSTRATE TREATMENT DEVICE, TEMPERATURE MEASUREMENT SYSTEM, METHOD FOR MEASURING TEMPERATURE OF TREATMENT DEVICE, TRANSPORTATION DEVICE, AND MEMORY MEDIUM
摘要 <p>Provided is a substrate processing apparatus capable of improving the workability of measuring a temperature-flat zone in a process furnace and the reliability of a temperature-flat length of a heater. The substrate processing apparatus includes a process chamber configured to process a substrate retained in a retainer loaded therein; a temperature measuring device configured to measure an inside temperature of the process chamber; a transfer device configured to transfer the substrate at least to the retainer; and a controller configured to control the transfer device and the temperature measuring device to move the transfer device to a predetermined position before the inside temperature of the process chamber is measured and to obtain the inside temperature by the temperature measuring device while vertically moving the transfer device with the temperature measuring device attached to the transfer device when the inside temperature of the process chamber is measured.</p>
申请公布号 KR20150008128(A) 申请公布日期 2015.01.21
申请号 KR20147032242 申请日期 2013.05.23
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 WATANABE AKIHITO;MIYASHITA NAOYA;TAKASHIMA KATSUMI;HONDA SHIGERU
分类号 H01L21/66;H01L21/02;H01L21/677 主分类号 H01L21/66
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