Integrated rf MEMS, control systems and methods

摘要

An rf MEMS system has a semiconductor substrate, e.g., silicon. The system also has a control module provided overlying one or more first regions of the semiconductor substrate according to a specific embodiment. The system also has a base band module provided overlying one or more second regions of the semiconductor substrate and an rf module provided overlying one or more third regions of the semiconductor substrate. The system also has one or more MEMS devices integrally coupled to at least the rf module.

主权项

1. A method for fabricating an integrated rf-MEMS and control systems device, the method comprising:
providing a first semiconductor substrate having a first surface region; forming a control module provided on a first CMOS integrated circuit device region overlying one or more first regions of the first surface region, the first CMOS integrated circuit device region having a first CMOS surface region; forming a base band module provided on a second CMOS integrated circuit device region overlying one or more second regions of the first surface region, the second CMOS integrated circuit device region having a second CMOS surface region; forming an rf module provided on a third CMOS integrated circuit device region overlying one or more third regions of the first surface region, the third CMOS integrated circuit device region having a third CMOS surface region; forming a dielectric layer overlying the first CMOS surface region, the second CMOS surface region, and the third CMOS surface region; and forming one or more free standing MEMS structures overlying the dielectric layer and being integrally coupled to at least the rf module; wherein forming the one or more freestanding MEMS structures includes forming a transducer apparatus comprising; forming a movable base structure having an outer surface region overlying the dielectric layer; removing at least one portion from the movable base structure to form at least one inner surface region; forming at least one intermediate anchor structure spatially disposed within a vicinity of the inner surface region, the at least one intermediate anchor structure being coupled to the dielectric layer; and forming at least one intermediate spring structure coupled to at least one portion of the inner surface region, the intermediate spring structure being coupled to the intermediate anchor structure(s).