| 摘要 |
<p>Memory cells may have channel-supporting material, dielectric material over the channel-supporting material, carrier-trapping material over the dielectric material and an electrically conductive electrode material over and directly against the carrier-trapping material; where the carrier-trapping material includes gallium, indium, zinc and oxygen. A memory cell may be provided which has a channel-supporting material, a dielectric material over the channel-supporting material, a carrier-trapping material over the dielectric material, and an electrically conductive electrode material over and directly against the carrier-trapping material; where the carrier-trapping material includes gallium, indium, zinc and oxygen. It may be determined if carriers are trapped in the carrier-trapping material to thereby ascertain a memory state of the memory cell.</p> |
