发明名称 |
Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus |
摘要 |
A method of manufacturing a semiconductor device includes: housing a substrate into a processing chamber; and forming a metal nitride film on the substrate by supplying a source gas containing a metal element, a nitrogen-containing gas and a hydrogen-containing gas into the processing chamber; wherein in forming the metal nitride film, the source gas and the nitrogen-containing gas are intermittently supplied into the processing chamber, or the source gas and the nitrogen-containing gas are intermittently and alternately supplied into the processing chamber, or the source gas is intermittently supplied into the processing chamber in a state that supply of the nitrogen-containing gas into the processing chamber is continued, and the hydrogen-containing gas is supplied into the processing chamber during at least supply of the nitrogen-containing gas into the processing chamber. |
申请公布号 |
US8937022(B2) |
申请公布日期 |
2015.01.20 |
申请号 |
US201113990282 |
申请日期 |
2011.11.29 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
Ogawa Arito |
分类号 |
H01L21/318;C23C16/08;C23C16/34;C23C16/455;H01L21/285;H01L21/28;H01L29/49 |
主分类号 |
H01L21/318 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A method of manufacturing a semiconductor device, comprising:
housing a substrate into a processing chamber; and forming a metal nitride film on the substrate by supplying a source gas containing a metal element, a nitrogen-containing gas being a reducing gas and a hydrogen-containing gas being a reducing gas into the processing chamber; wherein in forming the metal nitride film, the source gas and the nitrogen-containing gas are intermittently supplied into the processing chamber under a non-plasma atmosphere, or the source gas and the nitrogen-containing gas are intermittently and alternately supplied into the processing chamber under the non-plasma atmosphere, or the source gas is intermittently supplied into the processing chamber in a state that supply of the nitrogen-containing gas into the processing chamber under the non-plasma atmosphere is continued, the source gas and the nitrogen-containing gas are intermittently reacted with each other, to thereby intermittently form a metal nitride layer, and the hydrogen-containing gas is supplied into the processing chamber under the non-plasma atmosphere during at least supply of the nitrogen-containing gas into the processing chamber, to thereby modify the metal nitride layer. |
地址 |
Tokyo JP |